High purity: purity>99%, no impurities, static electricity, suitable for semiconductor and other high clean scenes.
Precision adsorption: low surface roughness (Ra≤0.1μm), uniform adsorption force (error <±2%), no damage to the workpiece, slip.
High temperature resistance: high temperature resistance above 300℃, thermal expansion coefficient close to silicon, small thermal deformation.
Corrosion resistance: strong acid and alkali resistance, plasma resistance, suitable for dry etching process.
High strength and wear resistance: sintered at 1700℃, hardness 1600Hv, long life.
Good insulation: volume resistivity>10 µ Ω·cm, micro-short circuit prevention.
Customizable: adjust grain/porosity to meet different thermal expansion requirements.
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