High purity: purity>99.5%, no impurity pollution, suitable for semiconductor and other high-precision scenarios.
Accurate adsorption: extremely smooth surface (Ra≤0.05μm), uniform pores (Φ20-50μm), adsorption force error <±1.5%, no damage to the workpiece.
High temperature resistance: -200 ℃~600℃, thermal expansion coefficient close to silicon, small deformation at high temperature.
Corrosion resistance: strong acid alkali, plasma resistance, life> 1 million cycles.
High strength: sintered at 1650℃, hardness 1600Hv, impact resistance, strong sealing (very low leakage rate).
Insulation: volume resistivity>10 µ Ω·cm, avoid micro-short circuit (such as wafer cutting).
Zero magnetic interference: magnetic susceptibility <1×10, suitable for magnetron sputtering, electron beam processing and other magnetic field sensitive scenes.
Customizable: support shape, heating/antistatic function customization, adapt to multi-scene requirements.
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